ELECTRON BEAM LITHOGRAPHY: an effective way to manufacture nanostructured arrays
electron beam lithography; PMMA; nanolitography.
In the present work, nanostructured arrangements were manufactured using electron beam lithography. For this, rotation parameters and resist interaction (polymethylmethacrylate) with the substrate were studied. It was shown that the rotation of 3000 rpm for 50 seconds provided a better result in obtaining the resist layer. An Electronic Microscope, model Auriga – ZEISS, was used to manufacture seven samples with different geometries and dimensions. To remove sensitized areas a mixture of isopropanol and methyl isobutil ketone was used. Different openings, dwell time and dosage were investigated. For all samples a 30 kV acceleration voltage was used and the best opening was 10 micrometers. It has been shown that different dosages promote significant changes in the quality of lithographed standards. When a dosage of 1400 nC/µm2 is used, silicon was exposed beyond expected, compromising surrounding areas. To meet specific demands, nanometric structures were manufactured in the form of donuts. Finally an antenna structures have been manufactured, which will allow to investigate physical phenomena in nanometric arrangements. This work contributes to the formation of qualified labor to manufacture nanostructures, using electron beam lithography, which will meet specific needs in various areas of knowledge.